Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-12-19
1999-11-16
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257248, 257250, H01L 27148, H01L 29768
Patent
active
059862955
ABSTRACT:
A charge coupled device and a manufacturing method therefor are provided. The charge coupled device has a transfer electrode portion having a first gate electrode, a second gate electrode having an end portion partially overlapping an end portion of the first gate electrode, and a third gate electrode having one end portion partially overlapping the other end portion of the first gate electrode and the other end portion thereof partially overlapping the other end portion of the second gate electrode. The charge coupled device also has a charge transfer portion located in a semiconductor substrate under the first, second and third gate electrodes, which includes a first potential area formed in the semiconductor substrate under the second gate electrode and a second potential area formed in the semiconductor substrate under the third gate electrode. The charge coupled device further has a clock portion which includes a first clock terminal connected to the first and third gate electrodes, and a second clock terminal connected to the second gate electrode. This charge coupled device may prevent unnecessary local potential barriers or wells produced by a misalignment, and thus may provide increased charge transfer efficiency.
REFERENCES:
patent: 3943543 (1976-03-01), Caywood
patent: 4097885 (1978-06-01), Walsh
patent: 4148132 (1979-04-01), Bower
patent: 4831425 (1989-05-01), Pals et al.
patent: 5270559 (1993-12-01), Yariv et al.
patent: 5369293 (1994-11-01), Slob
Fenty Jesse A.
Saadat Mahshid
Samsung Electronics Co.
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