Charge-coupled device

Static information storage and retrieval – Addressing – Byte or page addressing

Patent

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Details

365183, G11C 1300

Patent

active

045049300

ABSTRACT:
The invention relates to a charge-coupled SPS memory comprising a series input register, a parallel section and a series output register. In order to increase the retention time leakage current drain regions are provided beside the memory. Since the charge collected as a result of leakage current is largest during the transport through the outermost registers of the parallel section, only the sides of the parallel section are screened by the said draining regions which preferably consist of dummy registers. FIG. 1.

REFERENCES:
patent: 4228526 (1980-10-01), Lee

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