Charge-coupled device

Details Charge-coupled device Charge-coupled device

1988-11-18

1989-10-31

James, Andrew J.

Facsimile and static presentation processing

Facsimile

Specific signal processing circuitry

357 30, 357 55, 357 56, 35821323, 35821326, 35821331, 377 61, 377 62, 377 63, H01L 2978, H01L 2714, H01L 2906

Patent

active

048781029

ABSTRACT:
A charge-coupled device comprising two clock electrodes (4,5) on the two opposite sides of the charge transport channel (3) and which extend the entire length of the channel. Charge storage regions (6-9) are located zigzagwise on both sides of the channel, as a result of which during charge transport the charge is transferred from one side to the other. Due to the separation of the electrodes the parasitic capacitance between them is low, achieving low power dissipation. The electrodes are located in grooves at the sides of the channel, leaving the surface of the channel unobstructed. The device can therefore serve as an image sensor of high sensitivity.

REFERENCES:
patent: 4450464 (1984-05-01), Yamada
Kishida et al, "Amorphous-Silicon Charge-Coupled Devices", Applied Physics Letters, vol. 41, No. 12, Dec. 15, 1982.

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