Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-05-26
1995-08-15
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257220, 257248, 257249, 257250, H01L 2978
Patent
active
054422078
ABSTRACT:
A charge coupled device including a first electrode consisting of a first region and a second region having lower resistance than the first region, and a second electrode consisting of a first region and a second region having lower resistance than this first region. The first region of the first electrode is adjacent to the first region of the second region at an interval of an insulating film. Capable of utilizing the force of electrical field, the device is superior in charge transfer efficiency as well as charge transfer velocity. It also has the capability to improve the performances of high picture quality solid state image sensing devices and time delay devices, which both necessitate a charge coupled device and operate at high frequencies. Additionally, a solid state image sensing device employing this device is not degraded in a dark state by generating a few pulse charges.
REFERENCES:
patent: 3796932 (1974-03-01), Amelio et al.
patent: 4206372 (1980-06-01), Levine
Goldstar Electron Co. Ltd.
Ngo Ngan V.
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