Charge-coupled component formed on gallium arsenide

Details Charge-coupled component formed on gallium arsenide Charge-coupled component formed on gallium arsenide

1978-08-21

1981-04-28

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 15, 357 89, 307221D, H01L 2978, H01L 2956, G11C 1928

Patent

active

042649153

ABSTRACT:
The invention relates to a charge coupled element in which electrodes with blocking properties, arranged in series, are located on a semiconductor member of gallium arsenide. The semiconductor member has a semi-insulating gallium arsenide substrate on which an n-conductive layer of gallium arsenide is formed, which n-conductive layer has a charge carrier concentration of 1.multidot.10.sup.15 through 5.multidot.10.sup.17 cm.sup.-3. The electrodes form a blocking transition with this n-conductive layer.

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