Charge coupled circuit arrangements and devices having controlle

Details Charge coupled circuit arrangements and devices having controlle Charge coupled circuit arrangements and devices having controlle

1978-04-28

1980-03-18

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 24, G11C 1928, H01L 2978

Patent

active

041941330

ABSTRACT:
In a CCD introduction of charge with good linearity and low signal input noise sensitivity is obtained by the control of punch-through of a depletion region associated with an input storage site to a rectifying barrier bounding a region in the semiconductor body separated from the CCD channel and forming a source of charge carriers to be stored and transported. In one form the source of charge carriers is an opposite conductivity type substrate on which is present a region of the one conductivity type in which a surface channel CCD is present. In other forms, including both surface channel CCD's and buried channel CCD's, buried layers are employed as source regions.

REFERENCES:
patent: 3623132 (1971-11-01), Green
patent: 3761744 (1973-09-01), Smith
patent: 3852801 (1974-12-01), Itoh et al.
patent: 3858232 (1974-12-01), Boyle et al.
patent: 3896485 (1975-07-01), Early
patent: 3918070 (1975-11-01), Shannon
Board et al. "CCFET: An Active Charge-Coupled Device" Electronics Letters, vol. II (9/18/75) pp. 452-453.

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