Semiconductor device manufacturing: process – Making passive device – Resistor
Patent
1997-12-12
2000-09-19
Wilczewski, Mary
Semiconductor device manufacturing: process
Making passive device
Resistor
438238, 438384, 438385, H01L 218234, H01L 218244, H01L 2120
Patent
active
061211044
ABSTRACT:
An integrated circuit resistor (18) has a layout in which a first parasitic capacitance (26) exists between first portions of the resistor (18) and a first integrated circuit feature (34), and a second parasitic capacitance (28) exists between second portions of the resistor and a second integrated circuit feature (32). The resistor (18) may have, for example, a zigzag or serpentine configuration, with portions of each leg of the zigzag configuration overlying the first and second integrated circuit features (34,32). The first and second integrated circuit features (34,32) are configured to produce substantially canceling charges on the first and second parasitic capacitances (26,28). The resistor may be defined by a doped semiconductor material, such as a polysilicon layer. The resistor may be used in many applications, such as a feedback resistor of an optoelectronic current-to-voltage converter (12).
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Culp Norman
Dierschke Eugene G.
Brady W. James
Mosby April M.
Park James
Telecky Jr. Frederick J.
Texas Instruments Incorporated
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