1988-03-07
1990-04-03
Hille, Rolf
357 55, 357 41, H01L 2978, H01L 2906, H01L 2702
Patent
active
049147404
ABSTRACT:
A charge amplifying memory cell and its memory of making based on trench technology. A trench is formed which reaches through an n-type well region to a p.sup.+ -type substrate. A triple layer is formed on two sidewalls of the trench consisting of two capacitive insulating layers and a intermediate p.sup.+ polysilicon layer. The trench is then at least partially filled with a conductor, such as polysilicon, facing the triple layer. Thereby, the intermediate polysilicon layer acts as a charge storage node with capacitance to both the substrate and the polysilicon filling the trench. The insulating layer facing the well is opened with a contact hole near its top so that a p.sup.+ transistor drain is formed in the adjacent well by diffusion from the polysilicon through the contact hole. A p.sup.+ transistor source is doped into the well with a gate region between it and the drain to provide a write transistor. A p+ region is also formed adjacent a sidewall of the trench other than the one containing the contact hole so that a read transistor is vertically formed in the n-type well between it and the substrate. The intermediate p.sup.+ polysilicon layer acts as the electrode of this read transistor, whereby stored charge is amplified by the read transistor.
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Hille Rolf
International Business Corporation
Limanek Robert P.
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