Characterizing an exposure tool for patterning a wafer

Details Characterizing an exposure tool for patterning a wafer Characterizing an exposure tool for patterning a wafer

2005-01-25

2005-01-25

Barlow, John (Department: 2863)

Data processing: measuring, calibrating, or testing

Measurement system

Performance or efficiency evaluation

C355S053000, C355S055000

Reexamination Certificate

active

06847919

ABSTRACT:
Characterizing an exposure tool involves receiving data describing a pattern formed at a wafer. The pattern is formed by illuminating the wafer using an exposure tool, and the data has a scan direction and slit direction. An image field is mapped according to the data to determine an image field error of the data, and the image field error is separated from the data to reduce variation of the data in the scan direction. The data is reduced to the slit direction. Errors associated with the exposure tool are determined from the data in order to characterize the exposure tool.

REFERENCES:
I. Grodnensky, et al., “Evaluation of lithographic imaging performance by optical area measurement”, Nikon Precision Inc., Belmont, CA, 6 total pages.
T. Hagiwara, et al., “A Method to Predict CD Variation Caused by Dynamic Scanning Focus Errors”, Optical Microlithography XIV, Christopher J. Progler, Editor, Proceedings of SPIE vol. 4346, 2001 SPIE 0277-786X/01, pp. 408-413.
C. Progler, et al., “Potential causes of across field CD variation”, SPIE vol. 3051; 0277-786X/97, pp. 660-671, 1997.
D. Flagello, et al., “Towards A Comprehensive Control Of Full-Field Image Quality In Optical Photolithography”, ASM Lithography BV, The Netherlands, pp. 1-14.

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