Characterization of three-dimensional distribution of...

X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis

Reexamination Certificate

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C378S071000

Reexamination Certificate

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07620149

ABSTRACT:
Provided is a method of determining a three-dimensional distribution of structural defects in a single crystal material, the method comprising: (a) disposing a single crystal sample on a holder, the sample being set to a symmetric reflection in the Bragg Geometry; (b) projecting a beam of incident x-rays on a predetermined crystal plane in the sample and reflecting the x-rays while the sample is azimuthally rotating with respect to an normal axis, the normal axis being perpendicular to the predetermined crystal plane; (c) obtaining geometrical measured values of a two-dimensional configuration of defects on the detector plane of a CCD detector; and (d) determining the three-dimensional distribution of the defects in the sample by formulating a geometrical relation between a three-dimensional configuration of defects on the sample and the geometrical measured values of the two-dimensional configuration of defects on the detector plane.

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patent: 2003/0128809 (2003-07-01), Umezawa et al.
patent: 2009/0103680 (2009-04-01), Park et al.
patent: 06-027049 (1994-02-01), None

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