Channelless gate array with a shared bipolar transistor

Details Channelless gate array with a shared bipolar transistor Channelless gate array with a shared bipolar transistor

1991-04-15

1991-11-19

Hille, Rolf

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 45, 3652256, H01L 2702, H01L 2710

Patent

active

050669966

ABSTRACT:
A semiconductor device is disclosed having a channelless gate array. A plurality of standard cells are formed on a gate array chip such that one of the standard cells is formed relative to the adjacent standard cell with a bipolar transistor and resistor shared, as a BiCMOS logic gate, by the mutually adjacent standard cells at one end.

REFERENCES:
patent: 4651190 (1987-03-01), Suzuki et al.
patent: 4682202 (1987-07-01), Tanizawa

Affiliated with

Also associated with

Rating

Channelless gate array with a shared bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Channelless gate array with a shared bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Channelless gate array with a shared bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1373709