Channeled mesa laser

Details Channeled mesa laser Channeled mesa laser

1979-09-12

1982-02-23

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 56, H01S 319

Patent

active

043170854

ABSTRACT:
A heterostructure semiconductor laser is characterized by having a channeled mesa contiguous with the top surface of the laser substrate. The channeled mesa comprises an elongated mesa with an elongated channel formed in the top surface of the mesa structure. The epitaxial growth of semiconductor layers over the channeled mesa produces layers having uniform thickness with smooth facet like texture and without layer surface irregularities. The channeled mesa may also be employed in the fabrication of nonplanar large optical cavity lasers.

REFERENCES:
patent: 3733561 (1973-05-01), Hayashi
patent: 3911376 (1975-10-01), Thompson
patent: 4033796 (1977-07-01), Burnham et al.
patent: 4099999 (1978-07-01), Burnham et al.
patent: 4166253 (1979-08-01), Small et al.
patent: 4215319 (1980-07-01), Botez
Figueroa et al., "Curved Junction Stabilized Filament (CJSE) Double-Heterostructure Injection Laser", App. Phys. Lett. 321, Jan. 1, 1978, pp. 55-57.
Panish et al., "Reduction of Threshold Current Density in GaAs-Al.sub.x Ga.sub.1-x As Heterostructure Lasers by Separate Optical & Carrier Confinement", App. Phys. Lett. 22, No. 11, Jun. 1, 1973, pp. 590-591.

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