Channeled heat dissipation device and a method of fabrication

Details Channeled heat dissipation device and a method of fabrication Channeled heat dissipation device and a method of fabrication

2003-03-12

2004-06-08

Chervinsky, Boris (Department: 2835)

Electricity: electrical systems and devices

Housing or mounting assemblies with diverse electrical...

For electronic systems and devices

C361S690000, C361S694000, C257S721000, C257S722000, C174S016100, C174S016300, C165S080300, C165S122000

Reexamination Certificate

active

06747873

ABSTRACT:

BACKGROUND
Higher performance, lower cost, increased miniaturization of integrated circuit components, and greater packaging density of integrated circuits are ongoing goals of the computer industry. As these goals are achieved, microelectronic dice, become smaller. Accordingly, the density of power consumption of the integrated circuit components in the microelectronic die has increased, which, in turn, increases the power requirements of other board level components that may be associated with the microelectronic die, such as voltage regulators, which may perform power delivery, for example. If the temperature of these associated components becomes too high, the components may be damaged or destroyed.
Various apparatus and techniques have been used and are presently being used for removing heat from microelectronic dice. One such heat dissipation technique involves the attachment of a high surface area heat sink to a microelectronic die.
FIG. 6
illustrates an assembly
200
comprising a microelectronic die
202
(illustrated as a flip chip) physically and electrically attached to a substrate carrier
204
by a plurality of solder balls
206
. A heat sink
208
is attached to a back surface
212
of the microelectronic die
202
by a thermally conductive adhesive
214
. The heat sink
208
is usually constructed from a thermally conductive material, such as copper, copper alloys, aluminum, aluminum alloys, or any suitable combination thereof. The heat generated by the microelectronic die
202
is drawn into the heat sink
208
(following the path of least thermal resistance) by conductive heat transfer.
High surface area heat sinks
208
are generally used because the rate at which heat is dissipated from a heat sink is substantially proportional to the surface area of the heat sink. The high surface area heat sink
208
usually includes a plurality of projections
216
extending substantially perpendicularly from the microelectronic die
202
. It is, of course, understood that the projections
216
may include, but are not limited to, elongate planar fin-like structures and columnar/pillar structures. The high surface area of the projections
216
allows heat to be convectively dissipated from the projections
216
into the air surrounding the high surface area heat sink
208
. A fan
218
may be incorporated into the assembly
200
to enhance the convective heat dissipation. However, although high surface area heat sinks are utilized in a variety of microelectronic applications, they may not provide heat dissipation for associated components that may be attached to the substrate carrier
204
(not shown). Additionally, heat sinks such as this may reduce or block airflow to components on a substrate, thereby causing areas of air stagnation, which may result in inadequate heat dissipation for one or more of these components.
Therefore, it would be advantageous to develop apparatus and techniques to effectively remove heat from a microelectronic die while providing some capability for heat dissipation for other components associated with the die.


REFERENCES:
patent: 5704419 (1998-01-01), Agonafer et al.
patent: 5740014 (1998-04-01), Lin
patent: 6023413 (2000-02-01), Umezawa
patent: 6067228 (2000-05-01), Li
patent: 6172872 (2001-01-01), Katsui
patent: 6301110 (2001-10-01), Kodaira
patent: 6348748 (2002-02-01), Yamamoto
patent: 6575231 (2003-06-01), Wu

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