Channel-stop process for use with thick-field isolation regions

Details Channel-stop process for use with thick-field isolation regions Channel-stop process for use with thick-field isolation regions

1995-10-25

1997-02-18

Dang, Trung

Fishing, trapping, and vermin destroying

437 52, 437 48, 437 27, 437 28, H01L 2176

Patent

active

056041500

ABSTRACT:
To ensure proper electrical insulation under thick-field isolation regions (23) grown in triple-well structures, the channel-stop impurity (30) is implanted using multiple doses at different energies, depending on the oxide thickness of the thick-field isolation regions (23). The split-implant procedure results in much wider process variation windows for the thick-field isolation regions (23). Process variations include oxide thickness of grown oxide, implant energy/dose and reduced thickness caused by wet de-glazing steps.

REFERENCES:
patent: 5240874 (1993-08-01), Roberts
patent: 5296393 (1994-03-01), Smayline et al.
patent: 5397727 (1995-03-01), Lee
patent: 5397734 (1995-03-01), Iguchi et al.
patent: 5453393 (1995-09-01), Bergemont

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