Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1984-06-15
1985-09-03
Saba, William G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 29580, 148 15, 148DIG85, 148DIG117, 156643, 357 50, H01L 2131, H01L 2176
Patent
active
045383430
ABSTRACT:
A sidewall-nitride isolation technology avoids stress-induced defects, while permitting a heavy channel stop implant to avoid turn-on of the field oxide transistor, by performing a two-step silicon etch. The first channel stop implant is performed after the first silicon etch, before the sidewall nitride is deposited. A further silicon etch is performed after the sidewall nitride is in place, and a second channel stop implant follows. The first implant can be a light dose, to avoid excess subthreshold leakage in the active devices due to field-assisted turn on at the corners of the moat regions, and the second implant can be a very heavy dose to provide complete isolation without any danger of the channel stop species encroaching on the active device regions.
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patent: 4219369 (1980-08-01), Ogiue et al.
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patent: 4292156 (1981-09-01), Matsumoto et al.
patent: 4361600 (1982-11-01), Brown
patent: 4445967 (1984-05-01), Kameyama
Hunter William R.
Pollack Gordon P.
Teng Clarence
Comfort James T.
Groover III Robert
Saba William G.
Sharp Melvin
Texas Instruments Incorporated
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