Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2008-04-07
2010-11-16
Geyer, Scott B (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
Reexamination Certificate
active
07833292
ABSTRACT:
An improved method for forming a capacitor. The method includes providing a carrier with a channel therein, providing a metal foil with a valve metal with a first dielectric on a first face of the metal foil, securing the metal foil into the channel with the first dielectric away from a channel floor, inserting an insulative material between the metal foil and each side wall of the channel, forming a cathode layer on the first dielectric between the insulative material, forming a conductive layer on the cathode layer and in electrical contact with the carrier, lap cutting the carrier parallel to the metal foil such that the valve metal is exposed, and dice cutting to form singulated capacitors.
REFERENCES:
patent: 6678927 (2004-01-01), Retseptor
patent: 2006/0120014 (2006-06-01), Nakamura et al.
Brenneman Keith R.
Chelini Remy J.
Croswell Robert T.
Dunn Gregory J.
Kinard John T
Geyer Scott B
Guy Joseph T.
KEMET Electronics Corporation
Nexsen Pruet , LLC
Nikmanesh Seahvosh J
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