Channel hot electron programmed memory device having improved re

Details Channel hot electron programmed memory device having improved re Channel hot electron programmed memory device having improved re

1997-12-12

1999-09-21

Hoang, Huan

Static information storage and retrieval

Floating gate

Particular biasing

36518527, G11C 1604

Patent

active

059562714

ABSTRACT:
A CHE programmed memory device (30) avoids forward biasing at an isolated P-well (38) junction with a deep N-well (36) and prevents emitting electrons that may cause voltage buildup across the isolated P-well region (38) by applying a forward bias current (50) or voltage source (40) connected to the deep N-well region (36) for slightly forward biasing the deep N-well region. This maintains the voltage drop of isolated P-well region (38) below the diode turn-on voltage.

REFERENCES:
patent: 5457652 (1995-10-01), Brahmbhatt
patent: 5491657 (1996-02-01), Haddad et al.
patent: 5657271 (1997-08-01), Mori
patent: 5751631 (1998-05-01), Liu et al.

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