Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Patent
1980-11-28
1983-05-03
Karlsen, Ernest F.
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
G01R 3122
Patent
active
043822290
ABSTRACT:
This teaches that by measuring the rate of change in gate current of an insulating gate field effect transistor, under normal operating conditions, the time required to achieve a predetermined change in source-to-drain current in the transistor can be found. Because changes in gate current depends more on sensitivity on charge trapping in the oxide than do changes in channel current, and since the gate current occurs only in the small region of electron emission, the effects on gate current are more quickly developed than the secondary effect of reduced channel current due to the charge in gate oxide caused by the presence of trapped electrons.
REFERENCES:
"Characterization of Electronic Gate Current in IGFET's Operating in the Linear and Saturation Regions" by P. E. Cottrell et al, 1977, Device and Research Conference, Jun. 1977.
"IGFET Hot Electron Emission Model", by A. Phillips, Jr. et al, 1975 IEDM Digest Paper 3.3, pp. 39-42.
"Optically Induced Injection of Hot Electrons into SiO2", by T. H. Ning et al, Journal of Applied Physics, Dec. 1974, pp. 5373-5378.
"Threshold Instability in IGFET's Due to Emission of Leakage Electrons from Silicon Substrate Into Silicon Dioxide", by T. H. Ning et al, Applied Physics Letter, Aug. 1, 1976, pp. 198-200.
"Hot-Electron Emission in N-Channel IGFET's", by P. E. Cottrell et al, 1979 IEEE, pp. 442-454.
"Substrate Current-A Device and Process Monitor", by S. A. Abbas, 1974, IEDM Paper 17.7, pp. 404-407.
IBM TDB, vol. 18, #8, Jan. 1976, p. 2455, "Detection of Hot-Electron Injection and Trapping in FET Devices", by El-Kareh et al.
IBM TDB, vol. 19, #6, Nov. 1976, pp. 2119-2120, "MOSFET Hot-Electron Effect Characterization", by E. Kriese et al.
IBM TDB, vol. 19, #5, Oct. 1976, pp. 1632-1633, "Hot Electron Monitor", by A. H. Auriemma et al.
Cottrell Peter E.
Troutman Ronald R.
International Business Machines - Corporation
Karlsen Ernest F.
Thornton Francis J.
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