Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-05-02
2006-05-02
Tran, Thien F. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S066000, C257S072000, C257S347000
Reexamination Certificate
active
07038241
ABSTRACT:
A channel-etch thin film transistor having a source electrode including a source electrode primary portion and a source electrode lead portion and a drain electrode including a drain electrode primary portion and a drain electrode lead portion. At least one of the source electrode lead portion and the drain electrode lead portion has a side-contact portion in contact directly with a side wall of the active layer. An averaged width of the side-contact portion is narrower than an averaged width of corresponding one of the source electrode primary portion and the drain electrode primary portion.
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Y. Chen et al., “A Light-Shield a-Si TFT with Low Dark-Leakage Currents”, The Institute of Electronics, Information and Communication Engineers, Technical Report of IEICE, EID98-216, (1999-03), pp. 85-88.
NEC LCD Technologies, LTD
Sughrue & Mion, PLLC
Tran Thien F.
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