Chanelled substrate double heterostructure lasers

Details Chanelled substrate double heterostructure lasers Chanelled substrate double heterostructure lasers

1980-02-04

1982-04-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 48, H01S 319

Patent

active

043238599

ABSTRACT:
In fabricating a III-V compound, for example, GaAs, having a layered structure a first layer is grown on a planar substrate by a vapor deposition process adapted to produce differential growth while a subsequent layer is grown by a deposition process which restores planarity. In this way, a uniformly thick combination layer is produced with a non-planar junction between its composite layers. Particularly in the fabrication of channelled substrate double heterostructure lasers, a channelled blocking layer is grown by organo-metallic pyrolysis (OMP) and a subsequent confining layer is grown using liquid phase epitaxy (LPE). The OMP process produces a channel with flanking shoulder portions which permit LPE growth of a very thin confining layer immediately above the shoulder portions thereby improving linearity of the device.

REFERENCES:
patent: 4099999 (1978-07-01), Burnham et al.
patent: 4166253 (1979-08-01), Small et al.
patent: 4169997 (1979-10-01), Logan et al.

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