Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor
Reexamination Certificate
2005-05-31
2005-05-31
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
C438S255000, C451S044000
Reexamination Certificate
active
06900522
ABSTRACT:
In a semiconductor wafer (W) having a periphery thereof chamfered, and having at least a main surface side thereof subjected to mirror finishing, an inclined surface (21) is formed on the periphery of the wafer, such that has an angle (θ) of inclination of the inclined surface (21) with respect to a main surface (10) is not smaller than 5° and not larger than 25°, and at the same time a length (L) of the same in the radial direction of the wafer is 100 μm or longer. Further, the inclined surface is configured to have a non-mirror-finished portion (21b) toward the periphery of the wafer.
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Kurita Hideki
Nakamura Masashi
Le Thao X.
Nikko Materials Co., Ltd.
Pham Long
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