Chamber for reducing contamination during chemical vapor deposit

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material

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118715, H01L 2120

Patent

active

061142271

ABSTRACT:
This invention relates to the design of apparatus for processing electronic devices, including equipment for chemical vapor deposition or transport polymerization. The new designs of gas separator plates, their configuration, and the regulation of gas flows through the system provides control over the pattern of precursor gas flow away from the separation plates, thereby decreasing the amount of byproducts that are deposited on the plates and throughout the reactor. New designs for shaping other surfaces of the dispersion head reduces contamination of those elements, and new designs for chamber panels decrease the deposition of byproducts on those surfaces, as well as other elements of the reactor. Decreasing deposition of byproducts increases the amount and the quality of the film that can be deposited without requiring the system to be shut down for cleaning. This increases the throughput of products in the deposition process, thereby increasing the efficiency of electronic device manufacture and lowering the cost.

REFERENCES:
patent: 4842686 (1989-06-01), Davis et al.
patent: 4950376 (1990-08-01), Hayashi et al.
patent: 5595602 (1997-01-01), Harlan

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