Chamber for reducing contamination during chemical vapor deposit

Details Chamber for reducing contamination during chemical vapor deposit Chamber for reducing contamination during chemical vapor deposit

1998-03-28

2000-06-27

Dang, Thi

Coating apparatus

Gas or vapor deposition

156345, C23C 1600

Patent

active

060793538

ABSTRACT:
This invention relates to the design of apparatus for processing electronic devices, including equipment for chemical vapor deposition. The new designs of gas separator plates, their configuration, and the regulation of gas flows through the system provides control over the pattern of precursor gas flow away from the separation plates, thereby decreasing the amount of byproducts that are deposited on the plates and throughout the reactor. New designs for shaping other surfaces of the dispersion head reduces contamination of those elements, and new designs for chamber panels decrease the deposition of byproducts on those surfaces, as well as other elements of the reactor. Decreasing deposition of byproducts increases the amount of thin film, and the quality of the film which can be deposited without requiring the system to be shut down. This increases the throughput of products in the deposition process, thereby increasing the efficiency of electronic device manufacture and lowering the cost.

REFERENCES:
patent: 4950376 (1990-08-01), Hayashi et al.
patent: 5595602 (1997-01-01), Harlan

Affiliated with

Also associated with

Rating

Chamber for reducing contamination during chemical vapor deposit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chamber for reducing contamination during chemical vapor deposit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chamber for reducing contamination during chemical vapor deposit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1775149