Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-08-08
2010-11-23
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000
Reexamination Certificate
active
07838864
ABSTRACT:
A three-dimensional memory array formed of one or more two-dimensional memory arrays of one-time programmable memory elements arranged in horizontal layers and stacked vertically upon one another; and a two-dimensional memory array of reprogrammable phase change memory elements stacked on the one or more two-dimensional memory arrays as the top layer of the three-dimensional memory array.
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Bray Kevin L.
Ovonyx Inc.
Vu Hung
LandOfFree
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