Chalcogenide memory cell with a plurality of chalcogenide electr

Details Chalcogenide memory cell with a plurality of chalcogenide electr Chalcogenide memory cell with a plurality of chalcogenide electr

1995-06-07

1998-08-04

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

257 4, 257 5, H01L 4500

Patent

active

057897581

ABSTRACT:
A chalcogenide memory cell with chalcogenide electrodes positioned on both sides of the active chalcogenide region of the memory cell. The chalcogenide memory cell includes upper and lower chalcogenide electrodes with a dielectric layer positioned therebetween. The dielectric layer includes an opening defining a pore. A volume of chalcogenide material formed integral to the upper chalcogenide electrode is contained within the pore. The upper and lower chalcogenide electrodes both have greater cross sectional areas than the pore.

REFERENCES:
patent: 4115872 (1978-09-01), Bluhm
patent: 4203123 (1980-05-01), Shanks
patent: 4809044 (1989-02-01), Pryor et al.
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5510629 (1996-04-01), Karpovich et al.

Affiliated with

Also associated with

Rating

Chalcogenide memory cell with a plurality of chalcogenide electr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chalcogenide memory cell with a plurality of chalcogenide electr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chalcogenide memory cell with a plurality of chalcogenide electr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1179783