Semiconductor device manufacturing: process – Direct application of electrical current
Patent
1997-12-16
1999-07-06
Guay, John
Semiconductor device manufacturing: process
Direct application of electrical current
438900, 438675, 365163, 257 2, H01L 4700, H01L 2726, H01L 2162
Patent
active
059207884
ABSTRACT:
A chalcogenide memory cell with chalcogenide electrodes positioned on both sides of the active chalcogenide region of the memory cell. The chalcogenide memory cell includes upper and lower chalcogenide electrodes with a dielectric layer positioned therebetween. The dielectric layer includes an opening defining a pore. A volume of chalcogenide material formed integral to the upper chalcogenide electrode is contained within the pore. The upper and lower chalcogenide electrodes both have greater cross sectional areas than the pore.
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Guay John
Micro)n Technology, Inc.
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