Cerium oxide abrasives for chemical mechanical polishing

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S691000, C438S693000, C252S079100

Reexamination Certificate

active

11106490

ABSTRACT:
The use of mixed cerium-containing synthetic solid abrasive materials in chemical mechanical polishing slurries can provide better selectivity, better substrate removal rates, or lower defect rates than conventional ceria slurries. The slurries have abrasive particles that include a plurality of solid cerium-containing phases selected from CeO2, Ce2O3, cerium-nitride material, cerium-fluoride material, and cerium-sulfide material, where different cerium-containing materials are present in different particles or on the same particles.

REFERENCES:
patent: 2003/0182868 (2003-10-01), Nojo et al.
patent: 2005/0090109 (2005-04-01), Carter et al.
patent: 2006/0032150 (2006-02-01), So et al.

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