Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-05-06
2008-05-06
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S693000, C252S079100
Reexamination Certificate
active
11106490
ABSTRACT:
The use of mixed cerium-containing synthetic solid abrasive materials in chemical mechanical polishing slurries can provide better selectivity, better substrate removal rates, or lower defect rates than conventional ceria slurries. The slurries have abrasive particles that include a plurality of solid cerium-containing phases selected from CeO2, Ce2O3, cerium-nitride material, cerium-fluoride material, and cerium-sulfide material, where different cerium-containing materials are present in different particles or on the same particles.
REFERENCES:
patent: 2003/0182868 (2003-10-01), Nojo et al.
patent: 2005/0090109 (2005-04-01), Carter et al.
patent: 2006/0032150 (2006-02-01), So et al.
Hayden Christopher G
Small Robert J.
Hayden Christopher G.
Hayden Stone PLLC
Vinh Lan
LandOfFree
Cerium oxide abrasives for chemical mechanical polishing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cerium oxide abrasives for chemical mechanical polishing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cerium oxide abrasives for chemical mechanical polishing will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3950376