Ceramic thin film on various substrates, and process for...

Coating processes – Coating by vapor – gas – or smoke

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C427S255230, C427S255280, C427S255380, C427S255394

Reexamination Certificate

active

10515450

ABSTRACT:
The process of Polymer Assisted Chemical Vapor Deposition (PACVD) and the semiconductor, dielectric, passivating or protecting thin films produced by the process are described. A semiconductor thin film of amorphous silicon carbide is obtained through vapor deposition following desublimation of pyrolysis products of polymeric precursors in inert or active atmosphere. PA-CVD allows one or multi-layers compositions, microstructures and thicknesses to be deposited on a wide variety of substrates. The deposited thin film from desublimation is an n-type semiconductor with a low donor concentration in the range of 1014-1017cm−3. Many devices can be fabricated by the PA-CVD method of the invention such as; solar cells; light-emitting diodes; transistors; photothyristors, as well as integrated monolithic devices on a single chip. Using this novel technique, high deposition rates can be obtained from chemically synchronized Si—C bonds redistribution in organo-polysilanes in the temperature range of about 200-450° C.

REFERENCES:
patent: 5028571 (1991-07-01), Pillot et al.
patent: 5126168 (1992-06-01), Sneddon et al.
patent: 5165955 (1992-11-01), Gentle
patent: 5354506 (1994-10-01), Niebylski
patent: 5489707 (1996-02-01), Sneddon et al.
patent: 5952046 (1999-09-01), Chayka
patent: 6045877 (2000-04-01), Gleason et al.
patent: 6270573 (2001-08-01), Kitabatake
patent: 6572923 (2003-06-01), Ma et al.
patent: 6599584 (2003-07-01), Plester et al.
patent: 6730802 (2004-05-01), Shen et al.
patent: 6838124 (2005-01-01), Hacker
patent: 0970267 (1998-10-01), None
He et al. Silicon nitride carbonitride by the pyrolysis of poly(methylsiladiazane). J. Am. Ceram. Soc. 78(11) pp. 3009-3017□□.
Mittov et al. “CVD of Silicon Oxynitride films onto silicon by the pyrolysis of hexamethyl disilazane with nitrogen-containing additives.” Russian Microcelectronics, (Jan. 2002), 31(1) 13-20□□□□.
Jiliang He et al., Silicon Nitride and Silicon Carbonitride by the Pyrolysis of Poly(methylsiladiazane), J. Am. Ceram. Soc., 78(11), 3009-3017 (1995).
Mihai Scarlete et al., Poly(methylsilane) and Poly(hydrazinomethylsilane), as Precursors for Silicon-Containing Ceramics, Applications of Organometallic Chemistry in the Preparation and Processing of Advanced Materials, eds. J.F. Harrod and R.M. Laine, 125-140 (1995).
Sanela Matric et al., Spectroscopic Analysis and Semiconductor Properties of Amorphous Thin Films Containing Silicon-Carbon-Nitrogen Desposited via a Polymeric Route, Canadian Journal of Analytical Sciences and Spectroscopy, 48(1), 1-8 (2003).
Mihai Scarlete et al., Spectroscopic Investigation of the Thin Silicon Nitride Films on Silicon Single-Crystal Wafers via Ammonia-Assisted Pyrolysis of Organosilicon Polymers, Chem. Mater., 13,655-661 (2001).
Mihai Scarlete et al., Nitrogenation of Silicon Carbide Layers Deposited on Silicon Single-Crystal Wafers via Pyrolysis of Poly(methylsilane), Chem. Mater., 7, 1214-1220 (1995).
Mihai Scarlete et al., Infrared Spectroscopic Study of Thin Films of Poly(methylisane), Its Oxidation, and Its Transformation into Poly(carbolisane) on the Surfaces of Silicon Single-Crystal Wafers, Chem., Mater., 6,977-982 (1994).
Mittov, O et al., “Chemical vapor deposition of silicon oxynitride films onto silicon by the pyrolysis of hexamethyl disilazane with nitrogen-containing additives”, Russian Microelectronics (Translation of Mikroelektronika) (2002), 31(1), 13-20.
Scarlete, M. et al., “Nitrogenation of Silicon Carbide Layers Deposited on Silicon”, Chemistry of Materials (1995), 7(6), 1214-20.
“F1188-00 Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption”, ASTM International, referenced ASTM standard on ASTM website, www.astm.org.
Budaguan, B.G. et al. “The development of a high-rate technology for wide-bandgap photosensitive a-SiC:H alloys”Journal of Alloys and Compounds, 327 (2001) pp. 146-150.
Cao, Feng et al. “Modification of Polycarbosilane as a Precursor with High Ceramic Yield for Oxygen-Free SiC Fibers”Korean J. Chem. Eng., 18(5) (2001) pp. 761-764.
Christidis, T. et al. “Comparative EPR study of hydrogenated and unhydrogenated amorphous silicon carbide thin films”Applied Surface Science184 (2001) pp. 268-272.
Grigoriev, D.A. et al. “Preparation of silicon carbide by electrospraying of a polymeric precursor”Philosophical Magazine Letters(2001) vol. 81, No. 4, pp. 285-291.
Jana, T. et al., “Doping of p-type microcrystalline silicon carbon alloy films by the very high frequency plasma enhanced chemical vapor deposition technique” Journal of Materials Research, 16(7), (2001) pp. 2130-2135.
Lau, S.P. et al. “Dependences of amorphous structure on bias voltage and annealing in silicon-carbon alloys”Materials Science and Engineering B85(2001) pp. 20-24.
Maya, L. “Plasma-enhanced chemical vapor deposition of boron nitride using polymeric cyanoborane as source”Journal of the American Ceramic Society, vol. 75, No. 7, (Jul. 1992) pp. 1985-1987.
Mogensen, Klaus B. et al. “Ultraviolet transparent silicon oxynitrate waveguides for biochemical microsystems”Optics Lettersvol. 26, No. 10, pp. 716-718.
Pola, Josef “Laser Gas-Phase Photolysis of Organosilicon Compounds: Approach to Formation of Hydrogenated Si/C, Si/C/f, Si/C/O and Si/0 Phases”PINSA, 66 A, No. 1 (Jan. 2000) pp. 107-136.
Scarlete, Mihai “Mechanism of Carbon and Oxygen Incorporation in Silicon Single Crystals Grown by the Czochralski (Cz) Technique”J. Electrochem. Soc., vol. 139, No. 4 (Apr. 1992 pp. 1207-1212.
Schroder, D.K. Chapter 2- “Carrier and Doping Concentration” Semiconductor Materials and Device Characterization, Wiley Interscience (1999) pp. 41-98).
Scopel, W.L. et al. “Theoretical and experimental studies of the atomic structure of oxygen-rich amorphous silicon oxynitrate films”Physical Review B, 68, 155332-1, pp. 1-6.
Shina, K. et al. “Thermal Rearrangement of Hexamethyldisilane to Trimethyl(dimethylsilymethyl)-silane” J. Org. Chem. (1958) 23, pp. 139.
Stachowicz, L. et al. “Synthesis of ultrafine SiC from rice hulls (husks): a plasma process” Plasma Chemistry and Plasma Processing, vol. 13, No. 3, (1993) pp. 447-461.
Van Der Pauw, L.J. “A Method of Measuring the Resistivity and Hall Coefficient on Lamellae of Arbitrary Shape”Philips Technical Review, vol. 20, (1958) pp. 220-224.
Van Der Pauw, L.J., Philips Research Reports, 13 (1958) pp. 1-9.
Wang, Yihua et al. “High temperature annealing of hydrogenated amorphous silicon carbide thin films”Thin Solid Films384 (2001) pp. 173-176.
Weast, R.C. “Ionization Potentials of Molecules”CRC Handbook of Chemistry and Physics, (1990) pp. E-93-E-94.
Yamamoto, K. et al. “XPS studies of amorphous SiCN thin films prepared by nitrogen ion-assisted pulsed-laser deposition of SiC target”Diamond and Related Materials, 10 (2001) pp. 1921-1926.
Yang, L. et al. “Synthesis of SiC Using Ion Beam and PECVD” 1998 5thInternational Conference on Solid-State and Integrated Circuit Technology, pp. 811-814.
Yoon, S.F. et al. “Application of electron cyclotron resonance chemical vapour deposition in the preparation of hydrogenated SiC films: a comparison of phosphorus and boron doping” Journal of Alloys and Compounds, 261, (1997) pp. 281-288.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Ceramic thin film on various substrates, and process for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ceramic thin film on various substrates, and process for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ceramic thin film on various substrates, and process for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3943647

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.