Ceramic substrate for semiconductor manufacturing, and...

Electric heating – Heating devices – Combined with container – enclosure – or support for material...

Reexamination Certificate

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C219S546000

Reexamination Certificate

active

06960743

ABSTRACT:
A ceramic substrate for a semiconductor-producing/examining device, in which it is possible to promptly raise its temperature, a heating face thereof has a small temperature variation, and no semiconductor wafer and the like is damaged or distorted by thermal impact. The ceramic substrate for a semiconductor-producing/examining device has a resistance heating element formed on a surface thereof or inside thereof, wherein a projected portion for fitting a semiconductor wafer is formed along the periphery thereof and a large number of convex bodies, which make contact with the semiconductor wafer, are formed inside the projected portion.

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