Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-05-10
2005-05-10
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S700000, C257S705000, C219S444100, C219S544000, C219S553000, C118S724000, C118S725000
Reexamination Certificate
active
06891263
ABSTRACT:
The present invention provides a ceramic substrate which can keep a sufficiently large breakdown voltage even if the pore diameter of its maximum pore is 50 μm or less to be larger than that of conventional ceramic substrates, can give a large fracture toughness value because of the presence of pores, can resist thermal impact, and can give a small warp amount at high temperature. The ceramic substrate of the present invention is a ceramic substrate for a semiconductor-producing/examining device having a conductor formed on a surface of the ceramic substrate or inside the ceramic substrate, wherein: the substrate is made of a non-oxide ceramic containing oxygen; and the pore diameter of the maximum pore thereof is 50 μm or less.
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Hiramatsu Yasuji
Ito Yasutaka
Ibiden Co. Ltd.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Soward Ida M.
Zarabian Amir
LandOfFree
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