Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2007-10-09
2007-10-09
Lewis, Monica (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S099000, C257S079000, C257S100000, C257S355000, C257S173000
Reexamination Certificate
active
10787657
ABSTRACT:
A metal oxide varistor comprising one or more zinc oxide layers is formed integral to a ceramic substrate to provide ESD protection of a semiconductor device mounted to the substrate. The portion of the ceramic substrate not forming the varistor may be aluminum oxide, aluminum nitride, silicon carbide, or boron nitride. The varistor portion may form any part of the ceramic substrate, including all of the ceramic substrate.
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Bhat Jerome Chandra
Collins, III William David
Lewis Monica
Ogonowsky Brian D.
Patent Law Group LLP
Philips Lumileds Lighting Company LLC
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