Ceramic semiconductors

Compositions – Electrically conductive or emissive compositions – Free metal containing

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252520, 252521, 252518, H01B 102

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041014545

ABSTRACT:
Ceramic semiconductor materials of positive temperature coefficient of resistivity characterized by low room temperature resistivity, by very high peak resistivity and by excellent voltage sensitivity properties are economically produced by sintering in air. Barium and other titanate, stannate and zirconate bases are combined with silicon oxide, with manganese or ruthenium oxide and with selected rare earth oxide additives in proportions which are particularly adapted to consistently provide the desired resistivity and voltage sensitivity properties while permitting economical manufacture by use of air sintering.
Ceramic semiconductors of positive temperature coefficient of resistivity which display a very sharp increase in resistivity within a selected temperature range have been known for some time. Such semiconductor materials have been obtained by sintering certain base ceramic compositions of a perovskite structure with selected rare earth oxide additives. Such base ceramic compositions have included barium or strontium titanates, or other titanates, stannates or zirconates or combinations thereof, and the various rare earth additives or dopants have included lanthanum, cerium and yttrium.

REFERENCES:
patent: 3256499 (1966-06-01), Khouri et al.
patent: 3496433 (1970-02-01), Siegrist
patent: 3669907 (1972-06-01), Kohashi et al.
patent: 3673119 (1972-06-01), Ueoka et al.
patent: 3732117 (1973-05-01), Nitta et al.
patent: 3816348 (1974-06-01), Popowich

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