Ceramic package for semiconductor device

Details Ceramic package for semiconductor device Ceramic package for semiconductor device

1990-08-31

1992-01-14

Zimmerman, John J.

Stock material or miscellaneous articles

All metal or with adjacent metals

Having composition, density, or hardness gradient

428620, 428621, 428668, 428680, 428626, B32B 1504

Patent

active

050809806

ABSTRACT:
A ceramic package used for a semiconductor device comprises a ceramic base including a die-bonding area and wire-bonding areas defined. A metal underlayer formed on the die-bonding or wire-bonding areas essentially consists of two-plated layers of: a cobalt layer plated on the ceramic base and a nickel layer plated on the cobalt layer. The underlayer is annealed and, them, a gold-plated layer is formed on the underlayer.

REFERENCES:
patent: 3977840 (1976-08-01), Estep et al.
patent: 4465742 (1984-08-01), Nagashima et al.
patent: 4601424 (1986-07-01), Adwalpalker et al.

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