Ceramic member for semiconductor manufacturing equipment

Details Ceramic member for semiconductor manufacturing equipment Ceramic member for semiconductor manufacturing equipment

2006-04-04

2006-04-04

Group, Karl (Department: 1755)

Compositions: ceramic

Ceramic compositions

Yttrium, lanthanide, actinide, or transactinide containing

C501S127000, C501S153000

Reexamination Certificate

active

07022636

ABSTRACT:
There is provided a ceramic member for semiconductor manufacturing equipment which is formed of an alumina-based sinter containing an yttrium-aluminum-garnet at the amount of 3 to 50 wt %, silicon oxide at the amount of not more than 0.2 wt %, preferably 0.1 wt %, and the balance substantially alumina, wherein the sinter has dielectric loss of not more than 4×10−4particularly 2.5×10−4or less in the frequency range of 10 MHz to 5 GHz. Such a member may be formed of a ceramic sinter including an aluminum phase having mean crystal grain size in a range of 2 to 10 μm and a yttrium-aluminum-garnet phase having a mean crystal grain size in a range of 1.5 to 5 μm, wherein the ratio of the mean crystal grain size of the alumina phase to that of the yttrium-aluminum-garnet phase is larger than 1 and smaller than 7.

REFERENCES:
patent: 5484752 (1996-01-01), Waku et al.
patent: 5569547 (1996-10-01), Waku et al.
patent: 5580837 (1996-12-01), Dodds et al.
patent: 6383964 (2002-05-01), Nakahara et al.
patent: 05-217946 (1993-08-01), None
patent: 08-325054 (1996-12-01), None
patent: 2001-028502 (2001-01-01), None
patent: 2002-398395 (2002-02-01), None

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