Ceramic material of low thermal expansion coefficient and method

Compositions: coating or plastic – Coating or plastic compositions – Metal-depositing composition or substrate-sensitizing...

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106 733, 106 7332, 106 734, 106 735, 428428, 428446, C04B 3326

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041054563

ABSTRACT:
A process for producing ceramics to be used as substrates and packages of semiconductor devices, which having a thermal expansion coefficient close to that of silicon used as chip or wafer material of large scale integrations and a mechanical strength and thermal conductivity equal to those of alumina, wherein zircon and clays such as kaolin, ball clay and the like and an additive of one of Li.sub.2 O, TiO.sub.2 and ZnO and another of CoO, Co.sub.2 O.sub.3, Co.sub.3 O.sub.4 and MgO are mixed, molded and fired.

REFERENCES:
patent: 2559381 (1951-07-01), Wainer
patent: 3585390 (1971-06-01), Ishikawa
patent: 3804649 (1974-04-01), Manigault
patent: 3948813 (1976-04-01), Holcombe et al.
Ceramic Industry - Jan. 1967 - pp. 82-83 and p. 103 for "Clay Ball", Kaolin and Kaolin, Calcined.
Searle, A. B., "Refractory Materials" - (1950), pub. Chas Griffin & Co., Ltd., London, pp. 94-96 and 185.
Beranger, G. et al., "Modifications de Structure de la Zircone Pure ou All iee par le Passage d'un Courant Electrique Continu a Haute Temperature" - Rev. Hautes Temper et Refract. t. 3, 1966, pp. 235-242.

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