Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate
2006-11-21
2006-11-21
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
C427S252000, C438S680000, C438S681000, C438S682000, C438S683000, C438S685000
Reexamination Certificate
active
07138013
ABSTRACT:
A method of manufacturing a ceramic film includes a step of forming a ceramic film30by crystallizing a raw material body20. The raw material body20contains different types of raw materials in a mixed state. The different types of raw materials differ from one another in at least one of a crystal growth condition and a crystal growth mechanism in the crystallization of the raw materials. According to this manufacturing method, a surface morphology of the ceramic film can be improved.
REFERENCES:
patent: 5811153 (1998-09-01), Hashimoto et al.
patent: 6001416 (1999-12-01), Moriyama et al.
patent: 6060391 (2000-05-01), Tatsumi
patent: 6146905 (2000-11-01), Chivukula et al.
patent: 6232167 (2001-05-01), Satoh et al.
patent: 6602344 (2003-08-01), Natori et al.
patent: A 1-301590 (1989-12-01), None
patent: A 8-245263 (1996-09-01), None
patent: A 8-253324 (1996-10-01), None
patent: A 9-286619 (1997-11-01), None
patent: A 11-195765 (1999-07-01), None
patent: 1994-11765 (1994-12-01), None
Furuyama Koichi
Natori Eiji
Tasaki Yuzo
Hiteshew Felisa
Oliff & Berridg,e PLC
Seiko Epson Corporation
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