Ceramic electronic device and production method thereof

Details Ceramic electronic device and production method thereof Ceramic electronic device and production method thereof

2008-01-29

2008-01-29

Group, Karl E (Department: 1755)

Compositions: ceramic

Ceramic compositions

Titanate, zirconate, stannate, niobate, or tantalate or...

C501S138000

Reexamination Certificate

active

07323428

ABSTRACT:
A highly reliable ceramic electronic device having an excellent temperature characteristic of a capacitance and a low IR temperature dependency, comprising a dielectric layer: wherein the dielectric layer includes a main component expressed by a composition formula of BamTiO2+m, wherein “m” satisfies 0.995≦m≦1.010 and a ratio of Ba and Ti satisfies 0.995≦Ba/Ti≦1.010, and, as subcomponents, an oxide of Al and an oxide of Si or an oxide of R (note that R is at least one kind selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu); and includes a secondary phase composed of at least a part of the oxide of Al and at least a part of the oxide of Si or the oxide of R and being different from a main phase mainly composed of the main component; and the production method are provided.

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