Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1994-09-23
1996-05-28
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
257701, 257779, 257766, H01L 2306, H01L 2310, H01L 2315, H01L 2312
Patent
active
055214380
ABSTRACT:
In a ceramic base and metallic member assembly, a metallic member such as an input/output terminal is joined by solder to a ceramic base substrate by way of a stress relief layer. The ceramic base substrate has a metallized layer on which the stress relief layer is formed by plating. The stress relief layer is made of soft metal such as copper and has the thickness equal to or larger than 25 .mu.m. In one embodiment, a barrier made of glass or an organic insulating material for preventing outflow of solder is formed on a peripheral portion of a joining surface of the stress relief layer.
REFERENCES:
patent: 4352120 (1982-09-01), Kurihara et al.
patent: 4554575 (1985-11-01), Lucas
patent: 4556899 (1985-12-01), Kurihara et al.
patent: 5019554 (1991-05-01), Takeshita et al.
Miura Kazunori
Okamoto Naoyuki
Clark S. V.
Crane Sara W.
NGK Spark Plug Co. Ltd.
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