Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-08-09
1998-06-02
Zarabian, A.
Static information storage and retrieval
Floating gate
Particular biasing
36518521, G11C 1134
Patent
active
057611254
ABSTRACT:
The features of the present invention are that the distribution of the threshold voltages of cell transistors in one row of a non-volatile memory cell array can be measured by the I-V characteristic measurement for one time. In the cell threshold distribution detection circuit, a plurality of voltage comparison circuits are provided respectively for the bit lines, each for comparing a voltage of a corresponding bit line with a reference voltage VREF. Each of the comparison circuits has a first current node for allowing a first current I1 to flow in the case where the bit line voltage is higher than the reference voltage, and a second current node for allowing a second current I2 to flow in the case where the bit line voltage is lower than the reference voltage. The first current nodes of the comparison circuits are commonly connected to an external pad and the second current nodes of the comparison circuits are commonly connected to an external pad.
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Kabushiki Kaisha Toshiba
Zarabian A.
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