Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2005-01-11
2005-01-11
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S197000, C438S205000, C438S309000
Reexamination Certificate
active
06841810
ABSTRACT:
In one embodiment, a bipolar cell (31) includes a cell boundary (32) that defines a cell active area (33), a first array of bipolar transistors (41) is formed within the cell active area (33) and configured for a first function. The bipolar transistors (42) within the first array (41) are parallel to each other. The bipolar cell (31) further includes a second array of bipolar transistors (61) formed within the cell active area (33) and configured for a second function that is different than the first function. The bipolar transistors (62) within the second array (61) are parallel to each other and oriented in a different direction than the transistors (42) in the first array (41).
Jeffery Philip Alan
Jurek Kevin Joseph
Lay Michael S.
Seneff Timothy E.
Jackson Kevin B
Lee Eddie
Owens Douglas W.
Semiconductor Components Industries L.L.C.
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