Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-12-28
2009-11-10
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S226000
Reexamination Certificate
active
07616486
ABSTRACT:
A cell array of a flash memory device includes first and second memory block units, and a voltage generator. Each of the first and second memory block units includes a plurality of memory blocks having a plurality of memory cells. The voltage generator outputs a source voltage, a power supply voltage and a positive bias to the first and second memory block units. The first and second memory block units are connected in parallel through a bit line.
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Hynix / Semiconductor Inc.
Townsend and Townsend / and Crew LLP
Tran Michael T
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