Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-09-23
1996-04-23
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257428, 257436, 257442, 257459, 257466, 25037013, 25037014, H01L 31075, H01L 31105, H01L 31117
Patent
active
055106447
ABSTRACT:
An improved x-ray detector in the form of a p-i-n CdTe homojunction device is disclosed. The intrinsic ("i") layer is of high resistivity CdTe, while the n- and p-doped CdTe layers are epitaxially grown in a photo-assisted process in a molecular beam epitaxial apparatus. The n-dopant is conveniently indium, with an indium metal contact. The "i" layer is optionally epitaxially grown in a photo-assisted process. The p-dopant is preferably arsenic. A PAMBE formed mercury telluride contact layer enhances the ohmic contact to the p-layer, and a gold contact is provided to the contact layer. The use of the PAMBE technique facilitates high quality crystal growth and activation of the dopants. The resulting CdTe p-i-n homojunction device has a wide band gap (1.45 eV) essential to room temperature operation.
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Harris Karl A.
Myers, II Thomas H.
Yanka Robert W.
Checkovich Paul
Martin Marietta Corporation
Ngo Ngan V.
Young Stephen A.
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