CdTe system compound semiconductor single crystal

Details CdTe system compound semiconductor single crystal CdTe system compound semiconductor single crystal

2005-11-16

2009-06-09

Vanoy, Timothy C (Department: 1793)

Chemistry of inorganic compounds

Selenium or tellurium or compound thereof

C423S509000, C252S06230Q, C977S824000, C117S956000

Reexamination Certificate

active

07544343

ABSTRACT:
It is to define the resistivity and the contained amount of impurities of a CdTe system compound semiconductor single crystal and to provide a CdTe system compound semiconductor single crystal which is useful as a substrate for optical devices such as an infrared sensor and the like. In a CdTe system compound semiconductor single crystal for an optical device, a Group 1 (1A) element is included in a range of 5×1014to 6×1015cm−3in the crystal, a total amount of a Group 13 (3B) element and a Group 17 (7B) element included in the crystal is less than 2×1015cm−3and less than a total amount of the Group 1 (1A) element, and resistivity of the crystal is in a range of 10 to 104 Ωcm.

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M. Gauneau et al., Optical Materials, vol. 7, pp. 21 to 31, 3.3. Jan. 1997.

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