CdTe single crystal and CdTe polycrystal, and method for...

Details CdTe single crystal and CdTe polycrystal, and method for... CdTe single crystal and CdTe polycrystal, and method for...

2007-05-01

2007-05-01

Kunemund, Robert (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S013000, C117S082000, C117S083000, C117S956000

Reexamination Certificate

active

10505588

ABSTRACT:
A CdTe single crystal, wherein chlorine concentration in the crystal is between 0.1 and 5.0 ppmwt and resistivity at room temperature is not less than 1.0×109Ω·cm is obtained by growing the crystal according to one of a vertical gradient freezing method, a horizontal gradient freezing method, a vertical Bridgman method, a horizontal Bridgman method, and a liquid encapsulated Czochralski method by using a CdTe polycrystal, in which 50 to 200 ppmwt of chlorine is doped, as a raw material.

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