CdTe-base compound semiconductor single crystal for...

Details CdTe-base compound semiconductor single crystal for... CdTe-base compound semiconductor single crystal for...

2006-02-21

2006-02-21

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S442000, C257S444000

Reexamination Certificate

active

07002230

ABSTRACT:
In case of chlorine doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is set to chlorine concentration ranging from 0.1 ppmwt to 5.0 ppmwt and has no precipitation having diameter of 2 μm or above. In case of chlorine doping, an indium doping, a CdTe-base compound semiconductor single crystal used for an electro-optic element has a crystal which is obtained from a CdTe material melt, to which indium is doped at concentration ranging from 0.01 ppmwt to 1.0 ppmwt, according to a liquid phase epitaxial growth method and has a solidification ratio of 0.9 or below.

REFERENCES:
patent: 5535699 (1996-07-01), Kawazu et al.
patent: 05-155699 (1993-06-01), None
patent: 5-267408 (1993-10-01), None
patent: 6-95108 (1994-11-01), None
patent: 7-96478 (1995-10-01), None
patent: 2947288 (1999-07-01), None

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