CCD with transfer channel at lower potential than supply channel

Details CCD with transfer channel at lower potential than supply channel CCD with transfer channel at lower potential than supply channel

1987-06-04

1988-01-26

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

357 30, 357 89, 377 62, H01L 2978, H01L 2714, H01L 3100, G11C 1928

Patent

active

047219890

ABSTRACT:
A solid-state image sensing device has a plurality of first CCDs for transferring a charge along the column direction and a second CCD for transferring the charge supplied from the first CCDs along the row direction. The first and second CCDs have n-type first transfer channels and an n-type second transfer channel which are formed on a p-type semiconductor body. The p-type semiconductor body has a first region contacting the bottom surface of the first transfer channels and a second region contacting the bottom surface of the second transfer channel. An impurity concentration of the second region is lower than that of the first region.

REFERENCES:
patent: 3995302 (1976-11-01), Amelio
patent: 4065847 (1978-01-01), Borel et al.
patent: 4206371 (1980-06-01), Weimer
patent: 4504848 (1985-03-01), Matsumoto et al.
IEEE Transactions on Electron Devices, vol. ED-13, No. 1, Jan. 1984, pp. 83-88, Ishihara et al., "Interline CCD Image Sensor with an Antiblooming Structure".

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