CCD with differently doped substrate regions beneath a common el

Details CCD with differently doped substrate regions beneath a common el CCD with differently doped substrate regions beneath a common el

1978-10-27

1980-06-03

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 24, 357 30, 357 59, 357 89, G11C 1978, H01L 2978, H01L 2714, H01L 3100

Patent

active

042063710

ABSTRACT:
A CCD structure which includes beneath a single electrode, in response to a voltage applied to that electrode, a first substrate region in which a potential barrier is formed, a second substrate region on one side of the first region in which a relatively shallow potential well is formed, and a third substrate region on the other side of the first region in which a deeper potential well is formed. This kind of structure is useful, for example, in obtaining multiplexed outputs from a CCD array.

REFERENCES:
patent: 3958210 (1976-05-01), Levine
patent: 3967254 (1976-06-01), Kosonocky et al.
patent: 3971003 (1976-07-01), Kosonocky
patent: 3983573 (1976-09-01), Ishihara
patent: 4060738 (1977-11-01), Tasch et al.
Lancaster et al., "A Recirculating CCD with Novel Input and Output Structures" IEE Int. Electron Devices Meeting (12/74) Tech. Digest pp. 108-111.

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