CCD-type solid-state pickup device and its fabrication method

Details CCD-type solid-state pickup device and its fabrication method CCD-type solid-state pickup device and its fabrication method

1997-09-30

2000-01-11

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257249, 257250, 257435, H01L 27148, H01L 29768

Patent

active

060139250

ABSTRACT:
A first silicon oxide film, silicon nitride film, and polycrystalline silicon film are formed on the entire surface of a semiconductor substrate. Then, the polycrystalline silicon film is etched to form a first transfer electrode and then, the surface of the first transfer electrode is thermally oxidized to form a second silicon oxide film. Thereafter, a polycrystalline silicon film and a third silicon oxide film are formed on the entire surface and patterned to form a second transfer electrode. A fourth silicon oxide film is formed on the entire surface, and is etched back. Thereafter, the side wall surfaces of the third silicon oxide film and the second transfer electrode are covered with a fourth silicon oxide film. Thereafter, a light shielding film is selectively formed on them.

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patent: 5306926 (1994-04-01), Yonemato
patent: 5371397 (1994-12-01), Maegawa et al.
patent: 5493143 (1996-02-01), Hokari
patent: 5514887 (1996-05-01), Hokari
patent: 5578842 (1996-11-01), Shinji
patent: 5585653 (1996-12-01), Nakashiba
patent: 5619049 (1997-04-01), Kim
patent: 5844289 (1998-12-01), Terrnisha et al.
patent: 5844290 (1998-02-01), Furumiya

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