Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-09-25
2000-05-30
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, H01L 27148, H01L 29768
Patent
active
060693746
ABSTRACT:
A CCD type solid state imaging device including a plurality of vertically arranged light receiving elements, a plurality of vertical charge transfer electrodes associated with the light receiving elements and transfer channels through which signal electrical charges stored in the light receiving elements are readout and transferred in the charge transfer direction by the transfer electrodes. The present invention features that unlike the conventional CCD type solid state imaging device, the boundary line between at least a part of the vertical charge transfer electrodes and a part of the vertical charge transfer electrodes adjacent thereto is held aslant with respect to the transfer channels so that the vertical transfer efficiency of the device is increased without incurring a reduction in the amount of signal charges being handled and the readout of the signal charges stored in the light receiving elements to the transfer channels is performed more smoothly than the conventional device.
REFERENCES:
patent: 4518978 (1985-05-01), Takeshita
patent: 4589005 (1986-05-01), Matsuda et al.
patent: 4602289 (1986-07-01), Sekine
patent: 4935794 (1990-06-01), Miyatake
patent: 5237191 (1993-08-01), Yonemoto et al.
patent: 5306906 (1994-04-01), Aoki et al.
Patent Abstract of Japan, vol. 18, No. 144, Mar. 10, 1994 & JP 05 326914 A (Matsushita Electron Corp.), Dec. 10, 1993.
Ishigami Tomio
Izumi Akio
Kobayashi Atsushi
Naito Yasuhiko
Nakagawa Shinji
Munson Gene M.
Sony Corporation
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