CCD type solid-state image sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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Details

257233, H01L 29796, H01L 2714, H01L 3100

Patent

active

054462975

ABSTRACT:
A CCD type solid-state image sensor a n type silicon substrate, a first p type well formed over the substrate, photodiode regions deeply and widely formed in the first well, second p type wells formed in the first well, each of the second well being overlapped with each corresponding photodiode region and each photodiode region preceding to the corresponding photodiode region, n type VCCD channel regions respectively formed in the second wells, p type transfer gate channel regions each formed in each one of the second p type wells between each photodiode region and each corresponding VCCD channel region, p type channel stop regions respectively formed in the second wells, each of the channel stop regions being adapted to isolate each corresponding VCCD channel region from each corresponding preceding photodiode region, p type impurity regions respectively formed beneath surfaces of the photodiode regions, a thin insulating film formed over the entire exposed surface of the resulting structure, transfer gates formed on the thin insulating film to be respectively disposed over the second wells, an interlayer insulating film formed on the thin insulating film to cover the transfer gate electrodes, and a photoshield film formed over the entire exposed surface of the resulting structure except for portions respectively disposed over the photodiode regions.

REFERENCES:
patent: 4498013 (1985-02-01), Kuroda et al.
patent: 4851890 (1989-07-01), Miyatake
patent: 4951104 (1990-08-01), Kato et al.
patent: 5132762 (1992-07-01), Yamada
patent: 5181093 (1993-01-01), Kawaura
patent: 5191399 (1993-03-01), Maegawa et al.
patent: 5233429 (1993-08-01), Jung

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